- metal-silicon nitride-silicon oxide-silicon structure
- структура металл-нитрид кремния-оксид кремния-кремний
The New English-Russian Dictionary of Radio-electronics. F.V Lisovsky . 2005.
metal-silicon nitride-silicon oxide-silicon structure
Смотреть что такое "metal-silicon nitride-silicon oxide-silicon structure" в других словарях:
Silicon — Not to be confused with the silicon containing synthetic polymer silicone. aluminium ← silicon → phosphorus C ↑ Si ↓ Ge … Wikipedia
Silicon nitride — Preferred IUPAC name Silicon nitride … Wikipedia
nitride — /nuy truyd, trid/, n. Chem. a compound, containing two elements only, of which the more electronegative one is nitrogen. [1840 50; NITR + IDE] * * * ▪ chemical compound Introduction any of a class of chemical compounds in which nitrogen is… … Universalium
Silicon carbide — Chembox new Name = Silicon carbide ImageFile = Silicon carbide 3D balls.png ImageSize = 140px ImageName = Ball and stick model of part of a crystal of SiC ImageFile1 = silicon carbide detail.jpg ImageSize1 = 140px OtherNames = Section1 = Chembox… … Wikipedia
Boron nitride — IUPAC name Boron nitride Identifiers … Wikipedia
Gallium(III) nitride — Chembox new Name = Gallium(III) nitride IUPACName = Gallium(III) nitride OtherNames = None Listed. Name = Section1 = Chembox Identifiers CASNo = 25617 97 4 Section2 = Chembox Properties Formula = GaN MolarMass = 83.7297 g/mol Appearance = Yellow… … Wikipedia
Zinc oxide — Other names Zinc white Calamine Identifiers … Wikipedia
Beryllium oxide — Preferred IUPAC name Beryllium oxide[ … Wikipedia
MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up … Wikipedia
titanium processing — Introduction preparation of the ore for use in various products. Titanium (Ti) is a soft, ductile, silvery gray metal with a melting point of 1,675° C (3,047° F). Owing to the formation on its surface of an oxide film that is… … Universalium
Salicide — The term salicide refers to a technology used in the microelectronics industry used to form electrical contacts between the semiconductor device and the supporting interconnect structure. The salicide process involves the reaction of a thin metal … Wikipedia
